| Popis: |
In this paper, we successfully fabricate a high performance β-phase (In0.09Ga0.91)2O3 single-crystalline film deep ultraviolet (DUV) solar-blind photodetector. The 2-inches high crystalline quality film is hetero-grown on sapphire substrates using plasma-assisted molecular beam epitaxy (PA-MBE). The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector, which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal structure. The device exhibited a low dark current of 40 pA (0 V), while its UV photon responsivity exceeded 450 A/W (50 V) at the peak wavelength of 232 nm with illumination intensity of 0.21 mW/cm2 and the UV/VIS rejection ratio (R232nm/R380nm) exceeds 4×104. Furthermore, the devices demonstrated ultrafast transient characteristics for DUV signals, with fast-rising and fast-falling times of 80 ns and 420 ns, respectively. This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga2O3 alloys to enhance the performance of InGaO solar-blind detectors. Additionally, a two-dimension DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system. Our results pave the way for future applications of two-dimensional array DUV photodetectors based on large-scale InGaO hetero-epitaxially grown alloy wide bandgap semiconductor films. |
