| Autor: |
A.A. Padalitsa, P.V. Bulaev, A. I. Khatountsev, L. M. Vacilevskay, A. V. Petrovsky, A.A. Marmalyuk, I.D. Zalevsky, V. B. Kulikov, D. B. Nikitin, U. A. Kuznetsov, I. V. Budkin |
| Rok vydání: |
2003 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
InGaAs semiconductor heterostructures with multiple quantum wells for large-scale photodetectors on 3-5 spectral range were grown by low pressure metalorganic chemical vapor deposition. Growth conditions were optimizedto obtain highly uniform heterostructures which can be used for producing of photodetector arrays. Growth temperature was 750 °C, pressure — 60 torn Test photodetectors showed detectivity D5,65x109smHz"2W' at the spectralsensetivity maximum wavelength 5.2 im at measurement temperature 77 K. These results demonstrate potentialpossibility to use InGaAs/ AlGaAs heterostructures for manufacturing of large-scale photodetector arrays on 3-5im spectral range. The ways of further photodetector parameters improvement are suggested. 1. Introduction.The Infrared Photodetectors with the spectral sensitivity maximum in range 3-5 and 8-12 im (atmospherewindows) are widely used in medicine, security applications, night vision systems, navigation etc. In last years the |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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