Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection
| Autor: | Ziyi Zhang, Maki Kushimoto, Akira Yoshikawa, Koji Aoto, Leo J. Schowalter, Chiaki Sasaoka, Hiroshi Amano |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Applied Physics Express. 15:041007 |
| ISSN: | 1882-0786 1882-0778 |
| Popis: | We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode, fabricated on a single-crystal AlN substrate when operating at 5 °C. The threshold current density and device series resistance were reduced by improvements to the epitaxial structure and electrode arrangement. A peak wavelength of 274.8 nm was observed for lasing at a drive current over 110 mA, which corresponded to a threshold current density of 3.7 kA cm−2. The operating voltage at the threshold current was as low as 9.6 V. |
| Databáze: | OpenAIRE |
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