Evolution of structural and electronic properties of highly mismatched InSb films

Autor:	Rachel Goldman, X. Weng, Joseph P. Heremans, Dale L. Partin
Rok vydání:	2000
Předmět:	Diffraction Coalescence (physics) Condensed Matter::Materials Science Electron mobility Crystallography Materials science Condensed matter physics Atomic force microscopy Transmission electron microscopy X-ray crystallography Stress relaxation General Physics and Astronomy Electronic properties
Zdroj:	Journal of Applied Physics. 88:6276-6286
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1324702
Popis:	We have investigated the evolution of structural and electronic properties of highly mismatched InSb films, with thicknesses ranging from 0.1 to 1.5 μm. Atomic force microscopy, cross-sectional transmission electron microscopy, and high-resolution x-ray diffraction show that the 0.1 μm films are nearly fully relaxed and consist of partially coalesced islands, which apparently contain threading dislocations at their boundaries. As the film thickness increases beyond 0.2 μm, the island coalescence is complete and the residual strain is reduced. Although the epilayers have relaxed equally in the 〈110〉 in-plane directions, the epilayer rotation about an in-plane axis (epilayer tilt) is not equal in both 〈110〉 in-plane directions. Interestingly, the island-like surface features tend to be preferentially elongated along the axis of epilayer tilt. Furthermore, epilayer tilt which increases the substrate offcut (reverse tilt) is evident in the [110] direction. High-resolution transmission electron microscopy indi...
Databáze:	OpenAIRE
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