Body Diode Reverse Recovery Effects on SiC MOSFET Half-Bridge Converters
| Autor: | Massimo Nania, Mario Pulvirenti, Luciano Salvo, Giuseppe Scarcella, Giacomo Scelba, Angelo Giuseppe Sciacca |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry 05 social sciences Process (computing) Electrical engineering 020207 software engineering 02 engineering and technology Converters Switching time MOSFET 0202 electrical engineering electronic engineering information engineering 0501 psychology and cognitive sciences Power semiconductor device Current (fluid) Reverse recovery business 050107 human factors Diode |
| Zdroj: | 2020 IEEE Energy Conversion Congress and Exposition (ECCE). |
| DOI: | 10.1109/ecce44975.2020.9236330 |
| Popis: | The aim of this paper is to evaluate the impact of SiC MOSFET body diode reverse recovery on device switching speed limits. Half-bridge converter leg, composed of 1200V, 130A SiC MOSFETs in HIP 247-4L package, has been analyzed in this study and experimental tests have been conducted, evaluating the electrical stresses to which the power devices are subjected when they are operated in extreme conditions. Results highlight how reverse recovery process can be significantly affected by the operating conditions, in terms of current slopes and temperature. |
| Databáze: | OpenAIRE |
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