Analysis of Time Dependent Electric Field Degradation in AlGaN/GaN HEMTs

Autor:	Ramakrishna Vetury, Jeffrey B. Shealy, Michael D. Hodge, Eric R. Heller
Rok vydání:	2014
Předmět:	Materials science business.industry Electric field Wide-bandgap semiconductor Optoelectronics Degradation (geology) Algan gan Electrical and Electronic Engineering business Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 61:3145-3151
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2014.2336248
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ff615fa21086c2dbb29b08511c63b9dd https://doi.org/10.1109/ted.2014.2336248 Zobrazit plný text záznamu