Optimization of operating parameters in polysilicon chemical vapor deposition reactor with response surface methodology
| Autor: | Chun-jiao Liu, Li-sha An, Ying-wen Liu |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Coupling
Work (thermodynamics) Materials science Silicon business.industry 020209 energy Nuclear engineering Process (computing) chemistry.chemical_element 02 engineering and technology Chemical vapor deposition Computational fluid dynamics Condensed Matter Physics Mole fraction Inorganic Chemistry 020401 chemical engineering chemistry 0202 electrical engineering electronic engineering information engineering Materials Chemistry Response surface methodology 0204 chemical engineering business |
| Zdroj: | Journal of Crystal Growth. 489:11-19 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2018.02.030 |
| Popis: | In the polysilicon chemical vapor deposition reactor, the operating parameters are complex to affect the polysilicon’s output. Therefore, it is very important to address the coupling problem of multiple parameters and solve the optimization in a computationally efficient manner. Here, we adopted Response Surface Methodology (RSM) to analyze the complex coupling effects of different operating parameters on silicon deposition rate (R) and further achieve effective optimization of the silicon CVD system. Based on finite numerical experiments, an accurate RSM regression model is obtained and applied to predict the R with different operating parameters, including temperature (T), pressure (P), inlet velocity (V), and inlet mole fraction of H2 (M). The analysis of variance is conducted to describe the rationality of regression model and examine the statistical significance of each factor. Consequently, the optimum combination of operating parameters for the silicon CVD reactor is: T = 1400 K, P = 3.82 atm, V = 3.41 m/s, M = 0.91. The validation tests and optimum solution show that the results are in good agreement with those from CFD model and the deviations of the predicted values are less than 4.19%. This work provides a theoretical guidance to operate the polysilicon CVD process. |
| Databáze: | OpenAIRE |
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