Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC

Autor:	Jean François Barbot, S. Leclerc, Christophe Tromas, Valerie Audurier, Alain Declémy, Michael Texier, Marie France Beaufort
Rok vydání:	2012
Předmět:	Materials science Strain (chemistry) Mechanical Engineering Stacking chemistry.chemical_element Condensed Matter Physics Ion Crystallography Ion implantation chemistry Mechanics of Materials medicine General Materials Science Swelling medicine.symptom Composite material Helium Stacking fault
Zdroj:	Materials Science Forum. :485-488
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.717-720.485
Popis:	Ion implantation into 4H-SiC induces a local gradient of strain which increases with the nuclear energy losses. With the increase of temperature the strain tends to become uniform in the whole implanted area requiring the migration of particles. In case of helium implantation, defects are more stabilized and their evolutions observed post thermal annealing are concomitant with the surface swelling. The local modifications imputed to the ion process lead to the formation and the pile-up of stacking faults in the highly damaged region.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ff2828a889c641cf53e0b4f24fd2edfc https://doi.org/10.4028/www.scientific.net/msf.717-720.485 Zobrazit plný text záznamu