Light Emitting Diode with Charge Asymmetric Resonance Tunneling

Autor: Y.T. Rebane, Sergey Stepanov, Y. G. Shreter, B. S. Yavich, Wang Nang Wang, Vladislav E. Bougrov
Rok vydání: 2000
Předmět:
Zdroj: physica status solidi (a). 180:121-126
ISSN: 1521-396X
0031-8965
DOI: 10.1002/1521-396x(200007)180:1<121::aid-pssa121>3.0.co;2-m
Popis: We suggest a system of two wells connected with Charge Asymmetric Resonance Tunneling (CART) as a basic element of light emitting diode (LED) structure for semiconductors with different masses of electrons and holes. The system consists of an emitter of electrons, an emitter of holes and an active layer. The hole emitter is coupled with the active in such a way that holes can be freely supplied into the active layer without a barrier. The electron emitter is coupled to the active layer via a barrier. The barrier design uses the charge asymmetric resonance tunneling phenomenon which allows to make the barrier transparent for electrons and blocking for holes. Advantages of this design are: the increased capture efficiency of the electrons into the active layer due to direct resonance tunneling of the electrons from the electron emitter on bound electron level in the active quantum well, the suppression of electron leakage into the hole emitter, the elimination of the parasitic light generated outside the active layer, and the electron emitter acts also as a good current spreading layer. First results of experimental investigation and theoretical modeling of the CART LED devices are reported.
Databáze: OpenAIRE
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