A 2-GHZ three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifier
| Autor: | Lawrence E. Larson, April S. Brown, M.S. Thompson, U.K. Mishra, Takyiu Liu, D.A. Pierson, L.M. Jelloian, S.E. Rosenbaum |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
business.industry Amplifier General Engineering Electrical engineering General Physics and Astronomy High-electron-mobility transistor Noise figure Low-noise amplifier Gallium arsenide chemistry.chemical_compound chemistry Return loss Optoelectronics Field-effect transistor business Monolithic microwave integrated circuit |
| Zdroj: | IEEE Microwave and Guided Wave Letters. 3:265-267 |
| ISSN: | 1051-8207 |
| Popis: | A three-stage monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) has been fabricated using 0.15- mu m-gate-length, InP-based (AlInAs-GaInAs) high electron mobility transistor (HEMT) technology. The LNA exhibited less than 0.5-dB noise figure and greater than 35-dB gain from 2.25 to 2.5 GHz. The input and output return loss exceeded 15 dB across the band. The results are believed to be the best reported to date for a MMIC amplifier in this frequency range. > |
| Databáze: | OpenAIRE |
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