40nm embedded Select in Trench Memory (eSTM) Technology Overview
| Autor: | Arnaud Regnier, Stephan Niel, Antonino Conte, F. La Rosa, M. Mantelli, Francois Maugain |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
business.industry
Computer science 020208 electrical & electronic engineering Transistor 02 engineering and technology Flash memory law.invention Non-volatile memory Microcontroller Memory cell law Embedded system Trench Limit (music) Scalability 0202 electrical engineering electronic engineering information engineering business |
| Zdroj: | 2019 IEEE 11th International Memory Workshop (IMW). |
| DOI: | 10.1109/imw.2019.8739731 |
| Popis: | The eStM (embedded Select in Trench Memory) is a floating gate based non-volatile memory cell conceived, developed and industrialized by STMicroelectronics for General Purpose and Secure Microcontrollers embedded applications. Thanks to its unique architecture, the eStM cell gathers the advantages of a conventional split-gate NVM cell together with a more compact cellbit area than a typical 1T Flash Memory cell, and it is claimed to represent the scalability limit for a floating gate based NOR NVM. |
| Databáze: | OpenAIRE |
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