Resonance enhancement of the photoemission from semiconductors with negative electron affinity

Autor:	L. G. Gerchikov, A. V. Subashiev
Rok vydání:	1996
Předmět:	Chemistry business.industry Fermi level Doping technology industry and agriculture General Physics and Astronomy Resonance Mathematics::Spectral Theory symbols.namesake Band bending Semiconductor symbols Atomic physics business Quantum Recombination Quantum well
Zdroj:	Journal of Applied Physics. 80:6008-6012
ISSN:	1089-7550 0021-8979
Popis:	The variation of photoemission from negative electron affinity semiconductor surface with the position of the surface Fermi level is theoretically studied. Resonance maxima both in photoyield and surface recombination rate (when the depth and the width of the quantum well in the band bending region (BBR) are close to the appearance of new quantum level) are predicted as a result of quantum character of the electron motion in the BBR. The resonance BBR transmission is expected to manifest itself in the temperature, doping, and thickness of the activation layer photoyield dependence. Experimental studies of the dependencies should help to monitor the evolution of the BBR during surface activation to the negative electron affinity state.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ff0f138a89263de6ba6bb83d59b9e472 https://doi.org/10.1063/1.363599 Zobrazit plný text záznamu