New Contact Etch Process for Embedded DRAM Applications

Autor:	Tong-Yu Chen, Chan-Lon Yang, Keh-Ching Huang, Le-Tien Jung, Tsu-An Lin, Water Lur
Rok vydání:	1999
Předmět:	Materials science business.industry Etching (microfabrication) High selectivity Contact resistance Junction leakage Process (computing) Optoelectronics business Key issues Layer (electronics) Dram
Zdroj:	MRS Proceedings. 564
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-564-177
Popis:	For embedded DRAM (E-DRAM) devices with feature sizes of 0.25 µm and beyond, contact processes with low contact resistance and low junction leakage current are required. The contact etch process needs to etch through multi-layer structures with SiO2, SiON/SiN layers and stop on Ti-polycide gate and Ti-salicide active regions at the same time. The key issues include high selectivity to TiSix, vertical profile, complete removal of SiON/SiN cap layer and no polymer residues. In this paper, multi-layer contact etching without attacking TiSix is reported. Using new process chemistry, the new contact etch process has been demonstrated for the manufacturing of 0.25 µm E-DRAM and beyond.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ff0c9082fdeb1b5b08e43ae958678db7 https://doi.org/10.1557/proc-564-177 Zobrazit plný text záznamu Full text from SpringerLink