Evolution of luminescence properties of natural oxide on silicon and porous silicon
| Autor: | E. V. Kolesnikova, V. I. Sokolov, Maria V. Zamoryanskaya, R. V. Sokolov |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Silicon business.industry Oxide Nanocrystalline silicon Mineralogy chemistry.chemical_element Cathodoluminescence Condensed Matter Physics Porous silicon Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Monocrystalline silicon chemistry.chemical_compound chemistry Optoelectronics Silicon oxide business Luminescence |
| Zdroj: | Semiconductors. 41:482-486 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The main aim of this study is to research the features of luminescence properties of natural silicon oxide layers formed on the polished silicon surface, structural silicon surface, and porous silicon films. Luminescence was excited by high-energy electron beams—the local cathodoluminescence method. Cathodoluminescence of the samples was studied 3, 24, and 48 days after preparation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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