Autor: |
T. Ziemann, Peter Holl, Antonio Francesco Longoni, Veljko Radeka, S. Rescia, Lothar Strüder, Pavel Rehak, Josef Kemmer, Giuseppe Bertuccio, U. Prechtel, E. Gatti, Marco Sampietro |
Rok vydání: |
1990 |
Předmět: |
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Zdroj: |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 288:168-175 |
ISSN: |
0168-9002 |
Popis: |
A charge sensitive preamplifier was realized on high resistivity detector grade silicon. The amplifier operates on a fully depleted bulk of a silicon wafer. As the anode region of any radiation detector operates at the full depletion as well, the possibility of direct integration of the preamplifier close to the detector anode was demonstrated. All production steps are compatible with production steps for radiation detectors. The implementation of the preamplifier is based on a new type of single sided field effect transistor which is the only type of active element in the design. The performance of single components and of the whole preamplifier is reported. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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