| Popis: |
Doping of GaN and InGaN epilayers with Mn and FE has been achieved by metal organic chemical vapor deposition (MOCVD) and solid-state diffusion. Hysteretic behavior was observed at room temperature and structural measurements, X-ray diffraction, and atomic force microscopy gave no evidence of second phases in the transition metal-doped epilayers. Multilayer structures grown by MOCVD were used to determine the dependence of magnetic ordering in GaMnN epilayers upon the availability of free holes. Based on these results a prototype spin device was designed and fabricated in which holes, adjacent to a GaMnN layer, could be modulated by an applied electric field. The device demonstrated that the transition from paramagnetic to ferromagnetic behavior could be switched on and off electrically at room temperature. |
