| Popis: |
The Ga2O3/(0,0.25,0.5,0.75, and 1) CdO thin films have been deposited using PLD technique onto quartz substrates at 300 °C and subsequently annealed in air at temperatures 750 °C for 5 h. The films have been tested for NH3 and NO2 sensing at various operating temperatures. The films showed fast response speed for NO2 gas (10.8 s) for 75% wt sample at 250 °C and (9 s) for pure Ga2O3 at 250 °C for NH3 gas. Also the fast recover speed for NO2 (45 s) of 50% wt for CdO at 300 °C and (39.6 s) for NH3 for 50% wt of CdO at 300 °C .The maximum sensitivity of pure Ga2O3 200 ppm of NH3 about 48.2% while the maximum sensitivity of tested samples to 60 ppm of NO2 about 61.7% at around 300 °C for 75%wt . |
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