Influence of Oxide Processing on the Defects at the SiC-SiO2 Interface Measured by Electrically Detected Magnetic Resonance
| Autor: | Dethard Peters, Gernot Gruber, Markus Koch, Peter Hadley, Thomas Aichinger, Gregor Pobegen |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Electrically detected magnetic resonance Passivation business.industry Annealing (metallurgy) Mechanical Engineering Oxide chemistry.chemical_element Condensed Matter Physics Nitrogen Spectral line chemistry.chemical_compound N incorporation chemistry Mechanics of Materials MOSFET Electronic engineering Optoelectronics General Materials Science business |
| Zdroj: | Materials Science Forum. 858:643-646 |
| ISSN: | 1662-9752 |
| Popis: | Anneals in nitrogen (N) containing atmosphere have been proven as efficient means of improving the channel mobility of SiC MOSFETs. It has been demonstrated that simultaneously the density of interface traps is reduced. However, this process is not yet fully understood. In this study we show a comparison of MOSFETs annealed in different atmospheres and compare their electrically detected magnetic resonance (EDMR) spectra with electrical parameters. We find hints for the N incorporation not only passivating but also creating or transforming defects. |
| Databáze: | OpenAIRE |
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