Photo-Induced Negative Differential Transconductance in Back-Gated Layered MoSe2/p-Ge Heterojunction Field Effect Transistors
| Autor: | Pranaba Kishor Muduli, Wasi Uddin, Vikram Kumar, Gufran Ahmad, Veerendra Dhyani, Samaresh Das |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Transconductance Doping Transistor chemistry.chemical_element Germanium Heterojunction Electronic Optical and Magnetic Materials law.invention chemistry law Nondestructive testing Materials Chemistry Electrochemistry Optoelectronics Field-effect transistor business Differential (mathematics) |
| Zdroj: | ACS Applied Electronic Materials. 2:1567-1573 |
| ISSN: | 2637-6113 |
| DOI: | 10.1021/acsaelm.0c00178 |
| Popis: | This paper reports the light-induced negative differential transconductance (NDT) in an n-type MoSe2 and highly doped p-type germanium (Ge) heterojunction transistor. A fully complementary-metal–ox... |
| Databáze: | OpenAIRE |
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