Technology for III-N heterogeneous mixed-signal electronics
| Autor: | Alex Man Ho Kwan, Qimeng Jiang, Kevin J. Chen |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Microwave amplifiers
business.industry Computer science High temperature electronics Electrical engineering Mixed-signal integrated circuit Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Power (physics) Reliability (semiconductor) Hardware_INTEGRATEDCIRCUITS Materials Chemistry Voltage source Electronics Electrical and Electronic Engineering business Electronic circuit |
| Zdroj: | physica status solidi (a). 211:769-774 |
| ISSN: | 1862-6300 |
| Popis: | III-N devices are suitable for high power RF/microwave amplifier, high temperature electronics, and power switches applications, and the peripheral mixed-signal electronics with sensing, protection, and control functions could provide optimized performance, increased functionality, and enhanced reliability. This paper addresses the technology to discuss the technology options of implementing III-N mixed-signal circuits, and then reviews the recent progress in the expansion of design library, based on monolithically integrated enhancement/depletion (E/D)-mode AlGaN/GaN HEMTs on GaN-on-silicon substrates. An integrated GaN proportional-to-absolute-temperature (PTAT) voltage source. |
| Databáze: | OpenAIRE |
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