Growth and characterization of Ta-doped Ga2O3 films deposited by magnetron sputtering
| Autor: | Keyun Gu, Shang Yi, Meng Cao, Ke Tang, Jie Deng, Zhang Zhiluo, Chen Zhuorui, Jian Huang, Yan Hu, Linjun Wang |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Mechanical Engineering Doping Analytical chemistry 02 engineering and technology Substrate (electronics) Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences X-ray photoelectron spectroscopy Mechanics of Materials Electrical resistivity and conductivity Hall effect 0103 physical sciences General Materials Science 0210 nano-technology Quartz Layer (electronics) |
| Zdroj: | Materials Science in Semiconductor Processing. 134:106040 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2021.106040 |
| Popis: | In recent years, Ga2O3 has attracted extensive attention at home and abroad due to its excellent properties. In this paper, Ta-doped Ga2O3 films were grown on quartz substrates by magnetron sputtering technique. Effects of substrate temperature and seed layer on the performance of the films were investigated. The results showed that all films had uniform, smooth surface morphology and better transparency (>85%) in the wavelength region of 300–800 nm. Hall effect measurement revealed low resistivity of 0.089 Ω cm and high carrier concentration of 2.4 × 1019 cm−3 for the Ta-doped Ga2O3 film grown with seed layer. XPS spectra demonstrated that Ta was incorporated into the Ga2O3 films and Ta5+ ions were obtained. |
| Databáze: | OpenAIRE |
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