Modification of electrical properties of the Au/1,1′ dimethyl ferrocenecarboxylate/n-Si Schottky diode
| Autor: | Gülşen Öztürk, M. Enver Aydin, Fahrettin Yakuphanoglu |
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| Rok vydání: | 2010 |
| Předmět: |
Chemical substance
Silicon Chemistry Mechanical Engineering Metals and Alloys Analytical chemistry Schottky diode chemistry.chemical_element Condensed Matter Physics Capacitance Electronic Optical and Magnetic Materials Mechanics of Materials Materials Chemistry Density of states Science technology and society Extrinsic semiconductor Diode |
| Zdroj: | Synthetic Metals. 160:2186-2190 |
| ISSN: | 0379-6779 |
| DOI: | 10.1016/j.synthmet.2010.08.006 |
| Popis: | The electrical and interface state density properties of the Au/1,1′ dimethyl ferrocenecarboxylate (DMFC)/n-Si structure have been investigated by current–voltage, capacitance–voltage and conductance–frequency methods. The Au/DMFC/n-Si structure exhibits a rectifying behavior with a non-ideal I–V behavior with an ideality factor greater than unity. The ideality factor and barrier height of the Au/DMFC/n-Si Schottky diode is lower than that of Au/n-Si Schottky diode. The interface state density of the diode was determined from G/ω–f plots and was of order of 5.61 × 1012 eV−1 cm−2. It is evaluated that the electrical properties of Au/n-Si diode is controlled using 1′ dimethyl ferrocenecarboxylate organic layer and in turn, Au/DMFC/n-Si structure gives new electronic parameters. |
| Databáze: | OpenAIRE |
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