Gamma-stimulated change of the photoluminescence properties of Cd1−xZnxTe thin films

Autor:	B. Danilchenko, O. Strilchuk, L. Rashkovetskyi, Iu. Nasieka
Rok vydání:	2011
Předmět:	Physics Nuclear and High Energy Physics Photoluminescence business.industry Relaxation (NMR) Analytical chemistry Crystal structure Substrate (electronics) Cadmium telluride photovoltaics Optoelectronics Photoluminescence excitation Emission spectrum Thin film business Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 648:290-292
ISSN:	0168-9002
Popis:	The low-temperature photoluminescence properties of Cd 0.9 Zn 0.1 Te thin film grown on CdTe substrate were investigated in the connection with the dependencies on different doses of γ-irradiation. It was obtained that γ-irradiation leads to the substantial changes in the photoluminescence properties of the Cd 0.9 Zn 0.1 Te/CdTe system. At first, it induces the rise of the intensities of the near-band-edge photoluminescence emission lines at the doses lower than 50 kGy due to the improving of the crystalline quality of the films. At high doses it leads to the decrease of the intensities of observed photoluminescence lines because of disordering of the crystalline structure. Secondly, γ-irradiation induces the redshift in the energy peak positions of all observed emission lines, which is caused by relaxation of the strain in the layers of Cd 0.9 Zn 0.1 Te film near CdTe substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::feb53ed12a9e2045a794fc9d349954f6 https://doi.org/10.1016/j.nima.2011.06.040 Zobrazit plný text záznamu Full Text from ScienceDirect