Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study
| Autor: | Tokuyuki Teraji, Yasuo Koide, Satoshi Koizumi, Toshimichi Ito, Yiuri Garino |
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| Rok vydání: | 2010 |
| Předmět: |
Condensed matter physics
Chemistry Schottky diode Diamond Biasing High voltage Surfaces and Interfaces engineering.material Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Saturation current Materials Chemistry engineering Transient (oscillation) Electrical and Electronic Engineering Diode Voltage |
| Zdroj: | physica status solidi (a). 207:1460-1463 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.200925448 |
| Popis: | We investigated the performance of the reverse characteristics of diamond Schottky diodes at high voltage. We observed that when the diode was in reverse bias voltage conditions, the negative current decayed with a stretched exponential behaviour, which can be ascribed to charging effects. During the discharging phase, where no bias was applied, we observed a positive current that shows again a decaying behaviour, but with a power law trend. These behaviours can be rationalized in terms of trapping/detrapping processes occurring at shallow level traps. |
| Databáze: | OpenAIRE |
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