Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition
| Autor: | Peiqing Luo, D.Y. Tang, Zhibin Zhou, X.M. Dou, R.Q. Cui, Kah-Yoong Chan |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Silicon Doping Nanocrystalline silicon Analytical chemistry General Physics and Astronomy chemistry.chemical_element Nanotechnology Surfaces and Interfaces General Chemistry Substrate (electronics) Chemical vapor deposition Combustion chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films chemistry Thin film Boron |
| Zdroj: | Applied Surface Science. 255:2910-2915 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2008.08.038 |
| Popis: | Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B 2 H 6 ) doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si:H thin films grown by HWCVD at low substrate temperature of 200 °C and with high hydrogen dilution ratio of 98.8%. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B 2 H 6 doping ratio, crystalline volume fraction, optical band gap and dark conductivity. |
| Databáze: | OpenAIRE |
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