Integration of Single Damascene 85/85 nm L/S copper trenches in Black Diamond using 193 nm optical lithography with dipole illumination

Autor:	M. Maenhoudt, Wen Wu, B. Sijmus, J. Van Olmen, Michele Stucchi, Sywert Brongersma, I. Vos, Ivan Ciofi, Iwan Vervoort, Francesca Iacopi, Zsolt Tokei, Karen Maex, M. Van Hove, J. Van Aelst, Herbert Struyf, Steven Demuynck, B. Eyckens, Youssef Travaly
Rok vydání:	2004
Předmět:	Materials science business.industry Copper interconnect Diamond chemistry.chemical_element engineering.material RC time constant Copper law.invention Resist chemistry law engineering Optoelectronics Photolithography business Lithography Next-generation lithography
Zdroj:	Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).
DOI:	10.1109/iitc.2003.1219745
Popis:	This paper describes the integration of Single Damascene 85/85 nm L/S copper trenches in Black Diamond (Applied Materials) dielectric (k=2.85). Optical lithography (193 nm) with off-axis illumination was used to print the trenches. Integration issues are discussed, and resistance and RC delay data are presented. The method is applied to study the resistivity for sub 100 nm copper lines.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fe9b8f72cebf70145dddc7101234fdb4 https://doi.org/10.1109/iitc.2003.1219745 Zobrazit plný text záznamu