Optimal Stage Determination of Sapphire Nitridation Process Completion under High-Energy Electron Beam Influence
| Autor: | Konstantin S. Zhuravlev, Timur V. Malin, Vladimir G. Mansurov, D. S. Milakhin, Yury Galitsyn |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science High energy electron beam Reflection high-energy electron diffraction business.industry Stage determination 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Smooth surface 0103 physical sciences Monolayer Sapphire Cathode ray Optoelectronics Crystalline perfection 0210 nano-technology business |
| Zdroj: | 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM). |
| Popis: | In this work, using the RHEED technique, the optimal stage of sapphire nitridation completeness was determined taking into account the electron beam influence on a nitridation process. It was found that as a result of the sapphire surface nitridation at the optimum stage of completion the A1N crystalline phase about one monolayer is formed on the surface. The A1N buffer layer growth under conditions of optimal stage of nitridation process completion is characterized by a smooth surface morphology and better crystalline perfection compared to A1N growth without nitridation or with excessive sapphire nitridation. |
| Databáze: | OpenAIRE |
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