Physics, Technology, and Modeling of Complementary Asymmetric MOSFETs
| Autor: | Courtney Parker, Sandeep R. Bahl, Pascale Francis, Jon Tao, William French, Jeng-Jiun Yang, Constantin Bulucea, Vijay Krishnamurthy, Tikno Harjono |
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| Rok vydání: | 2010 |
| Předmět: |
Physics
Engineering business.industry Transconductance Circuit design Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Electronic Optical and Magnetic Materials Threshold voltage law.invention CMOS law Logic gate Power electronics MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 57:2363-2380 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2010.2057197 |
| Popis: | The physics, technology, and modeling of complementary asymmetric MOSFETs are reviewed and illustrated with statistically representative silicon data from a recent manufacturing implementation, in which the transistors for the secondary power supply voltage are offered in asymmetric and symmetric constructions. The in-depth analysis of the device physics of asymmetric transistors provides new insights into their physical operation and into the operation of transistors using halo implants in general. The variability, matching, and noise implications of using halo implants are also analyzed, concluding that both asymmetric and symmetric devices need to be offered for uncompromised circuit design. The challenges associated with the compact modeling the asymmetric transistors are also reviewed and illustrated. The preferred manufacturing implementation uses retrograde wells with no dopant fillers at the surface, while avoiding the drain-to-source punch-through by source-side-only halo implants. In addition to the known switching speed and maximum voltage gain advantages of the asymmetric transistors, this particular device architecture offers superior hot-carrier reliability and transistor design flexibility. The availability of retrograde wells enables construction of high-reliability complementary extended-drain MOSFETs for a third higher power supply voltage. |
| Databáze: | OpenAIRE |
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