Overview of the STORM program application to 193nm singe layer resists
| Autor: | Andrew R. Neureuther, James R. Sweeney, O. Dimov, R. Cirelli, Omkaram Nalamasu, Pat G. Watson, Ebo H. Croffie, Allen H. Gabor, F. M. Houlihan, M. Cheng, I. Rushkin |
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| Rok vydání: | 2000 |
| Předmět: |
Chemistry
business.industry Software tool Storm Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Absorbance Optics Resist Electrical and Electronic Engineering Fourier transform infrared spectroscopy business Spectroscopy Lithography Layer (electronics) |
| Zdroj: | Microelectronic Engineering. 53:437-442 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(00)00351-8 |
| Popis: | A new TCAD software tool named STORM (SimulationTOols forResistModels) has been developed to support the quantitative modeling of resist processes in deep submicron lithography. Models for post exposure bake, silylation, wet development and dry development of surface imaged resists are chosen as test vehicles for STORM. Simulation demonstration of these first pass models to deep submicron resist processes such as top surface imaging and chemically amplified resist are presented in this paper. Application examples of 193nm single layer resists are also presented. The generation of acid was monitored using UV-visible spectroscopy to extract the resist absorbance parameters and the ''standard subtraction'' method to extract the photolysis rate constant. The extent of deprotection that occurs during the bake was determined by monitoring the characteristic FTIR absorbance band around 1170 cm^-^1 over a range of exposure doses, bake temperatures and bake times. Simulation comparison to experimental data for line-end shortening measurements is presented. |
| Databáze: | OpenAIRE |
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