Evaluation of interface-states density for MOSFETs fabricated on high-index (114) silicon surfaces

Autor:	Edmundo Gutierrez, W. Calleja, Joel Molina, Alfonso Torres, Carlos Zuniga, Don L. Kendall, Pedro Rosales
Rok vydání:	2013
Předmět:	Materials science Silicon Annealing (metallurgy) business.industry Polysilicon depletion effect Transistor Electrical engineering chemistry.chemical_element Strained silicon Electron law.invention Threshold voltage chemistry law MOSFET Optoelectronics business
Zdroj:	2013 IEEE International Conference of Electron Devices and Solid-state Circuits.
Popis:	Metal-oxide-semiconductor field-effect transistor (MOSFET) devices were fabricated on high-index silicon (114) surfaces and their threshold voltage (Vth) and interface-states density (Dit) parameters were both evaluated for the first time. Even though MOSFET devices aligned at 0°, 30°, 60° and 90° off the equivalent [110] direction present two closely related average Vth values, Dit evaluation shows that for all channel orientations (0°, 30°, 60° and 90°), this high-index silicon (114) surface develops a high-quality interface with SiO2 in which few electrons are trapped so that Dit as low as 1010 cm-2eV-1 can be obtained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fe63881f5a3f6922ebf119b75a312c3f https://doi.org/10.1109/edssc.2013.6628117 Zobrazit plný text záznamu