Preparation and analysis of amorphous carbon films deposited from (C6H12)/Ar/He chemistry for application as the dry etch hard mask in the semiconductor manufacturing process
| Autor: | Jaihyung Won, Dongjin Byun, Jong-Sik Choi, Yeonhong Jee, Seungmoo Lee, Samseok Jang, Hyeon-deok Lee |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials symbols.namesake Amorphous carbon chemistry X-ray photoelectron spectroscopy Plasma-enhanced chemical vapor deposition Ellipsometry Materials Chemistry symbols Dry etching Raman spectroscopy Carbon Deposition (chemistry) |
| Zdroj: | Thin Solid Films. 519:6737-6740 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2011.01.405 |
| Popis: | Amorphous carbon layers (ACL) were deposited on Si (100) wafers by plasma enhanced chemical vapor deposition (PECVD) by using 1-hexene (C 6 H 12 ) as a carbon source for dry etch hard mask of semiconductor devices manufacturing process. The deposition characteristics and film properties were investigated by means of ellipsometry, Raman spectroscopy, X-ray photo electron spectroscopy (XPS) and stress analysis. Hardness, Young's modulus, and surface roughness of ACL deposited at 550 °C were investigated by using nano-indentation and AFM. The deposition rate was decreased from 5050 A/min to 2160 A/min, and dry etch rate was decreased from 2090 A/min to 1770 A/min, and extinction coefficient was increased from 0.1 to 0.5. Raman analysis revealed a higher shift of the G-peak and a lower shift of the D-peak and the increase of I(D)/I(G) ratio as the deposition temperature was increased from 350 °C to 550 °C. XPS results of ACL deposited at 550 °C revealed a carbon 1s binding energy of 284.4 eV. The compressive film stress was decreased from 2.95 GPa to 1.28 GPa with increasing deposition temperature. The hardness and Young's modulus of ACL deposited at 550 °C were 5.8 GPa and 48.7 GPa respectively. The surface roughness RMS of ACL deposited at 550 °C was 2.24 A, and that after cleaning in diluted HF solution (H 2 O:HF = 200:1), SC1 (NH 4 OH:H 2 O 2 :H 2 O = 1:4:20) solution, and sulfuric acid solution (H 2 SO 4 :H 2 O 2 = 6:1) was 2.28 A, 2.30 A and 7.34 A, respectively. The removal amount of ACL deposited at 550 °C in diluted HF solution, SC1 solution and sulfuric acid solution was 6 A, 36 A and 110 A, respectively. These results demonstrated the viability of ACL deposited by PECVD from C 6 H 12 at 550 °C for application as the dry etch hard mask in fabrication of semiconductor devices. |
| Databáze: | OpenAIRE |
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