| Autor: |
B. Aspar, A.M. Papon, E. Jalaguier, S. Pocas, J.F. Michaud, M. Bruel |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362). |
| Popis: |
We describe a new technique which allows a large dimension III-V thin film to be transferred on a full silicon wafer. The potential applications of this technology to InP are: spatial solar cells and integration of optic functions on silicon. This original process, developed at the LETI and called IMPROVE or Smart-CutR, is based on proton implantation and wafer bonding. Proton implantation enables delamination of a thin monocrystalline layer from a thick substrate to be achieved whereas the wafer bonding enables the transfer of the delaminated layer onto a second substrate. The thickness of the film to be transferred is directly determined by the hydrogen ion implantation energy. The implanted substrate can be reclaimed after transfer. Today, one of the best known applications of Smart-CutR is the Silicon On Insulator structure. The Smart-CutR process is suitable for different kinds of applications and the principle of this process can be applied to various materials (Si, SiC, GaAs, ...). Application of this process to transfer of thin InP films onto silicon is presented here. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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