Fabrication of nanometer‐scale side‐gated silicon field effect transistors with an atomic force microscope

Autor: E. S. Snow, P. J. McMarr, Paul M. Campbell
Rok vydání: 1995
Předmět:
Zdroj: Applied Physics Letters. 66:1388-1390
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.113210
Popis: The fabrication of nanometer‐scale side‐gated silicon field effect transistors using an atomic force microscope is reported. The probe tip was used to define nanometer‐scale source, gate, and drain patterns by the local anodic oxidation of a passivated silicon (100) surface. These thin oxide patterns were used as etch masks for selective etching of the silicon to form the finished devices. Devices with critical features as small as 30 nm have been fabricated with this technique.
Databáze: OpenAIRE