Investigation of the Contact Resistance between Ti/TiN and Ru in Metal-1/Plate Contacts of Ruthenium Insulator Silicon Capacitor
| Autor: | Ju Young Yun, Gil Heyun Choi, Sang Bom Kang, U In Chung, Jung-Hun Seo, Joo Tae Moon, Jong-Myeong Lee, Byung Hee Kim |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon Metallurgy Contact resistance General Engineering General Physics and Astronomy chemistry.chemical_element equipment and supplies Ruthenium Metal chemistry Chemical engineering Plasma-enhanced chemical vapor deposition visual_art Physical vapor deposition Electrode visual_art.visual_art_medium Tin |
| Zdroj: | Japanese Journal of Applied Physics. 42:1874-1876 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.42.1874 |
| Popis: | The contact resistance between Ti/TiN and a Ru electrode in metal-1/plate contacts of ruthenium insulator silicon (RIS) capacitor is investigated. When physical vapor deposition (PVD) Ti/TiN was used as a barrier metal for the metal contact process, a high contact resistance of more than 5000 Ω/contact was obtained due to the oxidation of Ti by the residual oxygen in Ru electrode. On the other hand, with a plasma enhanced chemical vapor deposition (PECVD) Ti/CVD TiN barrier metal, oxidation of Ti was not observed and subsequently a low contact resistance of 15 Ω/contact was obtained. The absence of Ti oxidation with PECVD Ti/CVD TiN can be explained by the reduction of oxygen in the Ru electrode due to the H2 plasma environment in the PECVD-Ti process. |
| Databáze: | OpenAIRE |
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