High growth rate deposition of oriented hexagonal InN films
| Autor: | Kuei-Hsien Chen, Hwang, Li-Chyong Chen, Tzung-Han Lee, Luu-Gen Hwa, Ying-Jay Yang, Fuh-Hsiang Yang, Jih-Shang |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Indium nitride Metals and Alloys Surfaces and Interfaces Substrate (electronics) Chemical vapor deposition Nitride Nanocrystalline material Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystallography chemistry.chemical_compound Chemical engineering chemistry Materials Chemistry Texture (crystalline) Metalorganic vapour phase epitaxy Thin film |
| Zdroj: | Thin Solid Films. 405:194-197 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(01)01754-0 |
| Popis: | Highly oriented nanocrystalline indium nitride (InN) films were successfully grown on Si(111) substrate. The growth rate of InN film can be enhanced fourfold by a double-zone metal organic chemical vapor deposition system consisting of a high temperature NH3 pre-cracking zone and a low temperature deposition zone. A maximum growth rate of 6 μm/h was achieved due to the high cracking efficiency of NH3. Meanwhile, the growth temperature of the substrate can be varied from 350 to 600 °C, which provides more flexibility for the film structure. While X-ray diffraction revealed the (0001) texture of the film, the high-resolution transmission electron microscopy study concluded the growth of highly oriented nanocrystalline hexagonal InN, which may lead to potential solar cell and optoelectronic applications. |
| Databáze: | OpenAIRE |
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