Structural and electrical properties of cubic boron nitride thin films on (100)GaAs
| Autor: | G N Chaudhari, S M Chore, A Bath, S V Manorama |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Analytical chemistry chemistry.chemical_element Substrate (electronics) Nitride Condensed Matter Physics Evaporation (deposition) Electronic Optical and Magnetic Materials chemistry.chemical_compound Semiconductor chemistry Boron nitride Materials Chemistry Electrical and Electronic Engineering Thin film Metal–insulator transition Boron business |
| Zdroj: | Semiconductor Science and Technology. 17:1141-1143 |
| ISSN: | 0268-1242 |
| DOI: | 10.1088/0268-1242/17/11/301 |
| Popis: | Cubic boron nitride thin films were deposited on a (100)GaAs substrate by hot filament assisted electron beam deposition. The films were grown at a substrate temperature of 400 °C and a boron evaporation rate of 0.2 A s−1. The structural and electrical characteristics of deposited cubic boron nitride thin films were studied. Infrared transmittance spectra and x-ray diffraction studies have shown that a highly cubic phase of the deposited films was obtained. The electrical characteristics of the metal–insulator semiconductor (MIS) structure were measured by using a capacitance–voltage measurement technique. The results suggest that the films can form a stable MIS diode structure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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