Effect of electron beam on structural, linear and nonlinear properties of nanostructured Fluorine doped ZnO thin films
| Autor: | Albin Antony, K.B. Manjunatha, Mohammed Abd-Lefdil, P. Poornesh, F. Cherkaoui El Moursli, Ganesh Sanjeev, A. Douayar, I.V. Kityk, S. Pramodini |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Laser 01 natural sciences Optical switch Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science Optics law 0103 physical sciences Continuous wave Optoelectronics Z-scan technique Irradiation Crystallite Thin film 0210 nano-technology business |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 94:190-195 |
| ISSN: | 1386-9477 |
| DOI: | 10.1016/j.physe.2017.08.015 |
| Popis: | Electron beam induced effects on Fluorine doped ZnO thin films (FZO) grown by chemical spray pyrolysis deposition technique were studied. The samples were exposed to 8 MeV electron beam at different dose rate ranging from 1 kGy to 4 kGy. All films exhibit a polycrystalline nature which shows an increase in crystallanity with irradiation dosages. The electron beam irradiation effectively controls the films surface morphology and its linear optical characteristics. Z-Scan technique was employed to evaluate the sign and magnitude of nonlinear refractive index and nonlinear absorption coefficient using a continuous wave laser at 632.8 nm as light source. Enhancement in the third order nonlinear optical properties was were noted due to electron beam irradiation. Tailoring the physical and NLO properties by electron beam, the FZO thin films becomes a promising candidate for various optoelectronic applications such as phase change memory devices, optical pulse compression, optical switching and laser pulse narrowing. |
| Databáze: | OpenAIRE |
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