Application of Polysilicon in Advanced IC - Technologies

Autor:	T.F. Meister, H. Kabza, Hans Schaber
Rok vydání:	1990
Předmět:	Materials science business.industry Bipolar junction transistor Silicon on insulator Active devices law.invention Capacitor chemistry.chemical_compound chemistry law visual_art Electronic component Silicide visual_art.visual_art_medium Optoelectronics Resistor business Dram
Zdroj:	MRS Proceedings. 182
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-182-247
Popis:	The progress in IC technology is unthinkable without the extensive use of polysilicon for a wide variety of purposes. These range from simple passive components like resistors and contacts through more complex structures such as recrystallized layers for SOI and 3D techniques, poly-Si filled isolation trenches and electrodes of DRAM capacitors to active device applications, i.e. MOS gates and poly-Si emitters in bipolar transistors. As silicide or in combination with such polysilicon allows practical local interconnects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fe230be10a8d9aeddd8500b2b343c74e https://doi.org/10.1557/proc-182-247 Zobrazit plný text záznamu Full text from SpringerLink