Performance Enhancement of GeSn Transistor Laser with Symmetric and Asymmetric Multiple Quantum Well in the Base

Autor:	Soumava Ghosh, Bratati Mukhopadhyay, Gopa Sen
Rok vydání:	2020
Předmět:	Materials science Heterojunction bipolar transistor Multiple quantum 02 engineering and technology 01 natural sciences Transistor laser law.invention Condensed Matter::Materials Science law 0103 physical sciences Base (exponentiation) Quantum well 010302 applied physics Condensed Matter::Other business.industry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Power (physics) Optoelectronics 0210 nano-technology business Performance enhancement
Zdroj:	Semiconductors. 54:77-84
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782620010212
Popis:	The performance of a Multiple Quantum Well (MQW) Heterojunction Bipolar Transistor Laser (HBTL) has been studied using GeSn alloy. Both symmetric and asymmetric quantum wells have been considered. Main analysis is focused on finding the minority carrier concentration in the base, the base threshold current, light output power of the device and the values are compared with GeSn based Single Quantum Well and InGaAs based Multiple Quantum Well Transistor Laser.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fe22c3d184ba79c718ca4dce1454ee5b https://doi.org/10.1134/s1063782620010212 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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