Simulation of Filed Effect Sensor Based on Graphene Nanoribbon to Detect Toxic NO Gas
| Autor: | Amin Jodat, Amir Hossein Bayani |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Graphene business.industry Fermi level Field effect 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention symbols.namesake Physisorption law 0103 physical sciences symbols Optoelectronics Field-effect transistor Sensitivity (control systems) Current (fluid) 0210 nano-technology business Communication channel |
| Zdroj: | Silicon. 10:2695-2699 |
| ISSN: | 1876-9918 1876-990X |
| DOI: | 10.1007/s12633-018-9807-2 |
| Popis: | This paper presents using density functional method to study nitrogen monoxide (NO) molecule physisorption with various concentrations on armchair graphene nanoribbon (GNR). We calculate the physical and electronic parameters of the GNR after nitrogen monoxide molecules adsorption. The Green’s function method is used to obtain the electronic properties and electrical current through the ribbon. The GNR is considered as a channel of a back-gated field effect transistor (FET) to study the sensing properties of a graphene nanoribbon field effect (GNR-FET) sensor. Results show that the GNR is a suitable sensing layer for NO detection with different concentrations. Also, the current in the channel increases when NO molecules density is increased. To improve the sensitivity of the sensor, we apply a gate voltage to change the Fermi level of the channel. Obtained results prove that by applying back gate voltage to the channel of the sensor, the current and sensitivity of the sensor are improved simultaneously. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink