Growth of InGaAsP/InP single‐quantum‐well and multiple‐quantum well structures by low‐pressure metal‐organic chemical vapor deposition

Autor:	V. R. McCrary, S. E. G. Slusky, S. N. G. Chu, G. Livescu, J. W. Lee, L. J. P. Ketelsen, M. A. Brelvi, J. L. Zilko, P. M. Thomas
Rok vydání:	1991
Předmět:	Auger electron spectroscopy Photoluminescence Chemistry business.industry Analytical chemistry General Physics and Astronomy Crystal growth Chemical vapor deposition Epitaxy Optoelectronics Metalorganic vapour phase epitaxy Thin film business Quantum well
Zdroj:	Journal of Applied Physics. 69:7267-7272
ISSN:	1089-7550 0021-8979
Popis:	InGaAsP/InP single‐quantum well and multiquantum‐well (MQW) structures have been successfully grown by low‐pressure metalorganic chemical vapor deposition (LP‐MOCVD). The quantum wells grown consist of 1.3‐ and 1.5‐μm composition InGaAsP, with barriers of InP. Layer thicknesses vary from 18 to 1300 A for the various structures grown. Analysis of these structures by low‐temperature photoluminescence reveals distinct, sharp luminescent peaks, with half‐widths from 4.8 to 13 meV. Cross‐sectional transmission electron microscopy (XTEM) and Auger spectroscopy of the quantum‐well structures reveals extremely sharp interfaces and homogeneous composition, demonstrating the feasibility of LP‐MOCVD for the growth of very thin epitaxial layers. This preliminary data indicates that the growth of MQW structures for the next generation of laser diodes (i.e., MQW‐distributed‐feedback lasers), with monolayer interfacial abruptness, is possible by LP‐MOCVD.
Databáze:	OpenAIRE
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