| Autor: |
G. N. Iluridze, V. L. Berkovits, A. B. Gordeeva, Paata J. Kervalishvili, T. A. Minashvili, T. V. L’vova, Akaki Gigineishvili, V. P. Ulin |
| Rok vydání: |
2016 |
| Předmět: |
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| Zdroj: |
NATO Science for Peace and Security Series B: Physics and Biophysics ISBN: 9789401774666 |
| DOI: |
10.1007/978-94-017-7468-0_6 |
| Popis: |
A comparative study of the nitride and sulfide chemisorbed layers as the surface passivants are done for (100) surfaces of InAs and GaAs. A chemical model which describes formation of such layers in hydrazine-sulfide and water sodium sulfide solution is developed. According to the model after wet chemical treatment in the hydrazine – sulfide solution a monolayer film of Ga-N forms on GaAs(100) surface. The film is covered by a physisorbed upper layer which can be removed by thermal annealing. In contrast, wet chemical treatment of InAs(001) surface in water sodium sulfide solution results in formation of chemisorbed layer with As-S bond which dissociates under light irradiation. Further annealing at comparatively low temperature induces formation of In-S and of a layer of indium sulfide. Using Auger electron spectroscopy, photoluminescence and Reflectance anisotropy measurements we have shown that the sulfide passivating layer on InAs(100) surface and the nitride passivating layer on GaAs(001) both produce an effective surface electronic passivation of these compounds. However, nitride passivation seems to be more preferable that the sulfide passivation, mainly due to a high stability of Ga-N surface bonds and surface nitride layers. We conclude that the most promising application of the wet chemical nitridation could be preparation of GaAs epi-ready substrates for epitaxial growth of A3-nitrides and A2B6 compounds. On the other hand for narrow gap A3B5 semiconductors the sulfide passivation could be preferable in some aspects. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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