Room temperature wafer surface cleaning by in-situ ECR (electron cyclotron resonance) hydrogen plasma for silicon homoepitaxial growth
| Autor: | Zhen‐Hong Zhou, Hyoun-woo Kim, Rafael Reif |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Silicon
Hydrogen Chemistry Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Plasma Chemical vapor deposition Epitaxy Electron cyclotron resonance Surfaces Coatings and Films Electronic Optical and Magnetic Materials Secondary ion mass spectrometry Materials Chemistry Wafer |
| Zdroj: | Thin Solid Films. 302:169-178 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(96)09548-x |
| Popis: | A defect-free silicon epitaxial layer was deposited by in-situ electron cyclotron resonance (ECR) hydrogen plasma cleaning at room temperature (25°C) in a multi-chamber chemical vapor deposition (MS-CVD) system with a load lock chamber. ECR hydrogen plasma was used and films were deposited thermally at low temperature (600 °C). Plain-view transmission electron microscopy (TEM), cross-sectional TEM, Rutherford backscattering spectroscopy, secondary ion mass spectrometry and in-situ emission-Fourier transform infrared spectroscopy results were presented to demonstrate the efficiency of room-temperature in-situ wafer cleaning processes. Process variables such as microwave power (and gas pressure), cleaning temperature and d.c. bias were investigated, and a.d.c. bias turned out to play a crucial role in low-temperature in-situ cleaning processes. Also, the effect of the in-situ cleaning temperature on cleaning efficiency was investigated and discussed. The results were shown to help understand the mechanism of the low-temperature wafer cleaning process. |
| Databáze: | OpenAIRE |
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