Quantum size effect from n-type porous silicon
| Autor: | J. D. Moreno, Z. Mouffak, J. M. Martinez-Duart, H. Aourag |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
Photoluminescence Silicon Scanning electron microscope business.industry Nanocrystalline silicon chemistry.chemical_element Nanotechnology Condensed Matter Physics Porous silicon Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Semiconductor chemistry Optoelectronics Wafer Electrical and Electronic Engineering Luminescence business |
| Zdroj: | Microelectronic Engineering. :655-659 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(98)00240-8 |
| Popis: | N-type and p-type Porous Silicon (PSi) have been observed by Scanning Electron Micrograph (SEM) and characterised by Photoluminescence (PL). The porous n-type silicon obtained under illumination (photoelectrochemical etching), consists of a layer of nanoporous silicon which covers a macroporous silicon layer with pores in the micron size range. Compared with the p-type PSi, the room temperature visible luminescence is many times reduced in the case of n-type PSi, and there is a photoluminescence peak shift to higher wavelengths. This shows that the luminescence from porous silicon is caused by quantum size effect. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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