Development of Mn/Mn and Mn/Mg High Temperature TE Devices

Autor: K. Takahashi, H. Suzuki, K. Oku, T. Kajitani, M. Saito
Rok vydání: 2018
Předmět:
Zdroj: Materials Today: Proceedings. 5:10347-10356
ISSN: 2214-7853
DOI: 10.1016/j.matpr.2017.12.283
Popis: Skeleton-type 20-pair MnSi1.74/Al3Mn3Si4 and MnSi1.74/Mg2Si devices, usable below 600°C, are fabricated successfully. Ni top-electrodes are brazed to the p- and n-thermoelectric (TE) blocks. 50 x 40 x 2mm3 metallic bases are used. The TE-blocks, 10x3x7 mm3 in size, are cutout from the 30mm ϕ x 7mm pellets synthesized by the spark plasma synthesis (SPS) technique. The thermoelectric performance of the Mn/Mn and Mn/Mg devices are 1.44W and 2.79W between 600 °C (hot side) to100 °C (cold side), respectively. While the internal resistance of the devices is 0.43 and 0.55 Ω slowly increasing from 100 °C to 600 °C.
Databáze: OpenAIRE