Thickness Effects on pH Response of HfO2Sensing Dielectric Improved by Rapid Thermal Annealing

Autor:	Chia-Ming Yang, Tseng−Fu Lu, Chao-Sung Lai
Rok vydání:	2006
Předmět:	Hydrogen ion Materials science Physics and Astronomy (miscellaneous) Silicon Ion sensing General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Dielectric Hafnium oxide chemistry Sputtering Rapid thermal annealing Voltage
Zdroj:	Japanese Journal of Applied Physics. 45:3807-3810
ISSN:	1347-4065 0021-4922
Popis:	Hafnium oxide (HfO2) was directly deposited on silicon as a sensing dielectric by RF sputtering. This combination was proposed to replace the HfO2/SiO2 stacked structure. The characterizations of HfO2 sensing dielectrics of various thicknesses were widely investigated using post-rapid thermal annealing (RTA) treatments at various temperatures and process times. The pH sensitivity of a 30-nm-thick HfO2 sensing dielectric was 49.2 mV/pH, almost the same as the traditional HfO2/SiO2 stacked electrolyte–insulator–semiconductor (EIS) structure. The verified minimum thickness for a HfO2 sensing dielectric was 4 nm. The ion sensing performance of HfO2-EIS, pH sensitivity, and drift voltage were all improved by RTA treatment. With 900 °C RTA, pH sensitivities can be improved and approach 59.6 mV/pH for all thicknesses of HfO2 sensing dielectric. HfO2 sensing dielectrics with 900 °C RTA are verified as good hydrogen ion sensing materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fdd0ba80803196f6a1ae421567258cce https://doi.org/10.1143/jjap.45.3807 Zobrazit plný text záznamu