Doping Ferroelectric Hafnium Oxide by in-Situ Precursor Mixing

Autor:	Wenke Weinreich, Kati Kühnel, Maciej Wiatr, C. Mart, Thomas Kampfe, Sabine Kolodinski, Malte Czernohorsky
Rok vydání:	2019
Předmět:	inorganic chemicals In situ Materials science Doping Ferroelectricity Electronic Optical and Magnetic Materials Hafnium oxide Atomic layer deposition Chemical engineering Scientific method Materials Chemistry Electrochemistry Thin film Mixing (physics)
Zdroj:	ACS Applied Electronic Materials. 1:2612-2618
ISSN:	2637-6113
DOI:	10.1021/acsaelm.9b00591
Popis:	We employ a modified atomic layer deposition process utilizing in-situ mixing of precursors to obtain doped hafnium oxide thin films with improved ferroelectric properties. The method is demonstrat...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fdc9e50701345fb1878197697e51440e https://doi.org/10.1021/acsaelm.9b00591 Zobrazit plný text záznamu