Lattice-Matched AlInGaN Electron-Blocking Layer Embedded in High-Performance GaN-based Light-Emitting Devices
| Autor: | Sung-Nam Lee, Hyunseok Na, Yong-Jin Kim |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry General Physics and Astronomy 02 engineering and technology Electroluminescence 021001 nanoscience & nanotechnology Laser 01 natural sciences Electron blocking layer law.invention law Lattice (order) 0103 physical sciences Optoelectronics Voltage droop Metalorganic vapour phase epitaxy 0210 nano-technology business Lasing threshold Diode |
| Zdroj: | Journal of the Korean Physical Society. 72:1194-1197 |
| ISSN: | 1976-8524 0374-4884 |
| Popis: | We report on high-performance GaN-based laser diodes (LDs) with a lattice-matched AlInGaN electron blocking layer (EBL) instead of a p-AlGaN EBL. In the low injection current region, the intensity of the electroluminescence (EL) of the LDs with a p-AlGaN EBL was slightly higher than that of the LDs with a p-AlInGaN EBL. However, the EL intensity of the LD with a p-AlInGaN EBL was higher than that of the LD with a p-AlGaN EBL with increasing injection current. Further, the lasing performance of the LD with a p-AlInGaN EBL was better than that of the LD with a p-AlGaN EBL at higher injection currents. From these results, we suggest that the lattice-matched AlInGaN EBL enhances the high-power performance by reducing the droop phenomenon in the light-emitting device. |
| Databáze: | OpenAIRE |
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