Luminescence features of bulk crystals β-(Ga-=SUB=-x-=/SUB=-Al-=SUB=-1-x-=/SUB=-)-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=

Autor: null Bugrov V. E., null Romanov A. E., null Odnobludov M. A., null Bauman D. A., null Zamoryanskaya M. V., null Spiridonov V. A., null Panov D. Yu., null Kremleva A. V., null Shkarupa I. I., null Korenko N. P., null Dementev P. A., null Dementeva E. V.
Rok vydání: 2022
Zdroj: Semiconductors. 56:262
ISSN: 1726-7315
DOI: 10.21883/sc.2022.04.53230.9776
Popis: This work is devoted to the study of the luminescence inhomogeneity nature of bulk (GaxAl1-x)2O3 samples grown by the Czochralski method. In the study of sample cleavages by the local cathodoluminescence method, regions with different luminescence were observed. To determine the cathodoluminescence contrast nature, we studied the uniformity of the aluminum distribution, the surface topography, and compared the luminescence spectra and the kinetics of emission bands for different regions of the sample. Also, to determine the luminescence bands nature, the crystal was annealed in air at 1000oC. This made it possible to observe the change in luminescence for the same region of the sample. Based on the studies performed, it was concluded that inhomogeneous luminescence is associated with the distribution of point defects. Upon annealing in air, the transformation of nonradiative recombination centers into luminescent centers was observed. Keywords: gallium oxide, luminescence, point defects.
Databáze: OpenAIRE