| Autor: |
L. V. Feoktistova, A. V. Butina, I. V. Butin, Yu. N. Barmakov |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 International Siberian Conference on Control and Communications (SIBCON). |
| DOI: |
10.1109/sibcon.2019.8729650 |
| Popis: |
This paper describes the research results of bipolar transistor as sensors of neutron fluence with particle energy larger than 0.1 MeV. The bipolar transistor connection diagram an device realization based on STM32 microcontroller are described. STM32 is used for registration of bipolar transistors gain factor the value of wtich changes under the radiation. The specific features of electrical mode of bipolar transistor during their calibration at reference neutron source and their application as sensors for radiation tests at neutron sources with different spectral distribution were taken into account. The proposed connection diagram and constructive solutions provide multichannel monitoring of radiation environment in “on-line” mode using minimum of additional communications lines. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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